![]() Today, GaN is grown on a variety of substrates, including sapphire, silicon carbide (SiC) and silicon (Si). The first-generation GaN-based power devices will play a key role in the power conversion within battery chargers, smartphones, computers, servers, automotive, lighting systems and photovoltaics. With a higher breakdown strength, faster switching speed, higher thermal conductivity and lower on-resistance, power devices based on GaN significantly outperform Si-based power chips. Gallium nitride (GaN) is anticipated to be the next-generation power semiconductor.
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